A quantitative study of bias triangles presented in chemical potential space

Abstract

We present measurements of bias triangles in several biasing configurations. Thorough analysis of the data allows us to present data from all four possible bias configurations on a single plot in chemical potential space. This presentation allows comparison between different biasing directions to be made in a clean and straightforward manner. Our analysis and presentation will prove useful in demonstrations of Pauli-spin blockade where comparisons between different biasing directions are paramount. The long term stability of the CMOS compatible Si/SiO2 only architecture leads to the success of this analysis. We also propose a simple variation to this analysis that will extend its use to systems lacking the long term stability of these devices.

14 pages, 5 figures

References in corpus (4)

• An addressable quantum dot qubit with fault-tolerant control fidelity
• Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
• The 3D transport diagram of a triple quantum dot
• Charge Offset Stability in Si Single Electron Devices with Al Gates