106 citations · 317 across the 18 of their papers we have counts for
19 papers
Broadband Microwave Spectroscopy for Two-Dimensional Material Systems
Antonio Levy, Neil Zimmerman
In recent years, interesting materials have emerged which are only available as micron-scale flakes, and whose novel physics might be better understood through broadband microwave…
Atomic-scale Control of Tunnel Coupling
Xiqiao Wang, Jonathan Wyrick, Ranjit V. Kashid +6
Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coup…
Effect of device design on charge offset drift in Si/SiO single electron devices
Binhui Hu, Erick D. Ochoa, Daniel Sanchez +3
We have measured the low-frequency time instability known as charge offset drift of Si/SiO single electron devices (SEDs) with and without an overall poly-Si top gate. We find…
Spin decoherence in a two-qubit CPHASE gate: the critical role of tunneling noise
Peihao Huang, Neil M. Zimmerman, Garnett W. Bryant
Rapid progress in semiconductor spin qubits has enabled experimental demonstrations of a two-qubit logic gate. Understanding spin decoherence in a two-qubit logic gate is necessary…
Long-term drift of Si-MOS quantum dots with intentional donor implants
Martin Rudolph, Bahman Sarabi, Roy Murray +2
Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-…
Machine Learning techniques for state recognition and auto-tuning in quantum dots
Sandesh S. Kalantre, Justyna P. Zwolak, Stephen Ragole +4
Recent progress in building large-scale quantum devices for exploring quantum computing and simulation paradigms has relied upon effective tools for achieving and maintaining good…
Possible hundredfold enhancement in the direct magnetic coupling of a single atomic spin to a circuit resonator
Bahman Sarabi, Peihao Huang, Neil M. Zimmerman
We report on the challenges and limitations of direct coupling of the magnetic field from a circuit resonator to an electron spin bound to a donor potential. We propose a device co…
"What is The SI?" A Proposal for an Educational Adjunct to the SI Redefinition
Neil M. Zimmerman, David B. Newell
We discuss how the likely 2018 redefinition of the SI system of units might affect the ability of students to understand the link between the units and the new system. The likely r…
Valley Phase and Voltage Control of Coherent Manipulation in Si Quantum Dots
Neil Zimmerman, Peihao Huang, Dimitrie Culcer
With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quant…
An electrically driven spin qubit based on valley mixing
Wister Huang, Menno Veldhorst, Neil M. Zimmerman +2
The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative me…
Valley blockade in a silicon double quantum dot
Justin K. Perron, Michael J. Gullans, Jacob M. Taylor +2
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies ha…
A new Regime of Pauli-Spin Blockade
Justin K. Perron, M. D. Stewart, Neil M. Zimmerman
Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin…
A quantitative study of bias triangles presented in chemical potential space
Justin K. Perron, M. D. Stewart, Neil M. Zimmerman
We present measurements of bias triangles in several biasing configurations. Thorough analysis of the data allows us to present data from all four possible bias configurations on a…
Formation of Strain-Induced Quantum Dots in Gated Semiconductor Nanostructures
Ted Thorbeck, Neil M. Zimmerman
Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains i…
Charge Offset Stability in Si Single Electron Devices with Al Gates
Neil M. Zimmerman, Chih-Hwan Yang, Nai Shyan Lai +2
We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 ) is inter…
Dephasing of Si singlet-triplet qubits due to charge and spin defects
Dimitrie Culcer, Neil M. Zimmerman
We study the effect of charge and spin noise on singlet-triplet qubits in Si quantum dots. We set up a theoretical framework aimed at enabling experiment to efficiently identify th…
Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model
Ted Thorbeck, Akira Fujiwara, Neil M. Zimmerman
Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproduci…
Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices
P. J. Koppinen, M. D. Stewart, Neil M. Zimmerman
We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and c…
Determining the Location and Cause of Unintentional Quantum Dots in a Nanowire
Ted Thorbeck, Neil M. Zimmerman
We determine the locations of unintentional quantum dots (U-QDs) in a silicon nanowire with a precision of a few nanometers by comparing the capacitances to multiple gates with a c…