106 citations · 317 across the 18 of their papers we have counts for
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Effect of device design on charge offset drift in Si/SiO single electron devices
Binhui Hu, Erick D. Ochoa, Daniel Sanchez +3
We have measured the low-frequency time instability known as charge offset drift of Si/SiO single electron devices (SEDs) with and without an overall poly-Si top gate. We find…
Spin decoherence in a two-qubit CPHASE gate: the critical role of tunneling noise
Peihao Huang, Neil M. Zimmerman, Garnett W. Bryant
Rapid progress in semiconductor spin qubits has enabled experimental demonstrations of a two-qubit logic gate. Understanding spin decoherence in a two-qubit logic gate is necessary…
Long-term drift of Si-MOS quantum dots with intentional donor implants
Martin Rudolph, Bahman Sarabi, Roy Murray +2
Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-…