106 citations · 317 across the 18 of their papers we have counts for
3 papers · 1 filter
Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model
Ted Thorbeck, Akira Fujiwara, Neil M. Zimmerman
Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproduci…
Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices
P. J. Koppinen, M. D. Stewart, Neil M. Zimmerman
We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and c…
Determining the Location and Cause of Unintentional Quantum Dots in a Nanowire
Ted Thorbeck, Neil M. Zimmerman
We determine the locations of unintentional quantum dots (U-QDs) in a silicon nanowire with a precision of a few nanometers by comparing the capacitances to multiple gates with a c…