96 citations · 281 across the 5 of their papers we have counts for
6 papers
A flexible design platform for Si/SiGe exchange-only qubits with low disorder
Wonill Ha, Sieu D. Ha, Maxwell D. Choi +14
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an e…
Undoped accumulation-mode Si/SiGe quantum dots
Matthew G. Borselli, Kevin Eng, Richard S. Ross +11
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrosta…
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
Matthew G. Borselli, Kevin Eng, Edward T. Croke +12
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devi…
Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
Matthew G. Borselli, Richard S. Ross, Andrey A. Kiselev +12
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiab…
Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor
E. T. Croke, M. G. Borselli, M. F. Gyure +5
We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the dop…
Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
Robert R. Hayes, Andrey A. Kiselev, Matthew G. Borselli +10
We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Us…