Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry

Abstract

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n-type.

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Cited by in corpus (32)

• Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
• Effects of nuclear spins on the transport properties of the edge of two-dimensional topological insulators
• Edge transport in InAs and InAs/GaSb quantum wells
• $h/e$ superconducting quantum interference through trivial edge states in InAs
• Helical Liquids in Semiconductors
• Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells
• Gapless insulating edges of dirty interacting topological insulators
• Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb
• Current noise from a magnetic moment in a helical edge
• Hidden edge Dirac point and robust quantum edge transport in InAs/GaSb quantum wells
• Rashba Sandwiches with Topological Superconducting Phases
• Counterflowing edge current and its equilibration in quantum Hall devices with sharp edge potential: Roles of incompressible strips and contact configuration
• Superconducting Quantum Interference in Edge State Josephson Junctions
• Passivation of Edge States in Etched InAs Sidewalls
• Localization-Driven Correlated States of Two Isolated Interacting Helical Edges
• Gate-tunable Electronic Transport in p-type GaSb Quantum Wells
• Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas
• Edge States in Lateral p-n Junctions in Inverted Band HgTe Quantum Wells
• Topological Charge/spin density Wave in InAs/GaSb Quantum Wells under an In-plane Magnetic Field
• Interplay of quantum spin Hall effect and spontaneous time-reversal symmetry breaking in electron-hole bilayers I: Transport properties
• Interaction-induced crossover between weak anti-localization and weak localization in a disordered InAs/GaSb double quantum well
• Majorana bound states in topological insulators with hidden Dirac points
• Edgeless and Purely Gate-Defined Nanostructures in InAs Quantum Wells
• Localization of trivial edge states in InAs/GaSb composite quantum wells
• Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells
• Electric field-induced edge state oscillations in GaSb/InAs quantum wells
• Electron-optics using negative refraction in two-dimensional inverted-band $pn$ junctions
• Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence
• Electrical tuning of helical edge states in topological multilayers
• Random-gate-voltage induced Al'tshuler-Aronov-Spivak effect in topological edge states
• Finite-temperature spectroscopy of dirty helical Luttinger liquids
• Microwave Photocurrent from the Helical Edge state of InAs/GaInSb Bilayers