Interaction-induced crossover between weak anti-localization and weak localization in a disordered InAs/GaSb double quantum well
arXiv:1911.11895 · doi:10.1103/PhysRevB.101.155302
Abstract
We present magneto-transport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top gate electrode, we observe a crossover from weak anti-localization (WAL) to weak localization (WL), when the inelastic phase breaking time decreases below spin-orbit characteristic time as a result of enhanced electron-electron interactions at lower carrier concentrations. The same crossover is observed with increasing temperature. The linear temperature behavior of inelastic scattering rate indicates that the dominant phase breaking mechanism in our 2D system is due to electron-electron interaction.
6 pages, 3 figures + Supplementary material (3 pages, 3 figures)
References in corpus (39)
- Topological Insulators
- Topological insulators and superconductors
- Spintronics: Fundamentals and applications
- New Perspectives for Rashba Spin-Orbit Coupling
- Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
- Semiconductor Spintronics
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Weak localisation in graphene flakes
- Observation of Quantum Spin Hall States in InAs/GaSb Bilayers under Broken Time-Reversal Symmetry
- Spin polarization of the quantum spin Hall edge states
- Edge-mode Superconductivity in a Two Dimensional Topological Insulator
- Perfect Andreev Reflection of Helical Edge Modes in InAs/GaSb Quantum Wells
- Linear magnetoresistance in topological insulators: Quantum phase coherence effects at high temperatures
- Edge Dynamics in a Quantum Spin Hall State: Effects from Rashba Spin-Orbit Interaction
- Observation of a Helical Luttinger-Liquid in InAs/GaSb Quantum Spin Hall Edges
- Images of edge current in InAs/GaSb quantum wells
- Edge Channel Transport in InAs/GaSb Topological Insulating Phase
- Edge Transport in the Trivial Phase of InAs/GaSb
- Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
- Gate-controlled spin-orbit interaction in a parabolic GaAs/AlGaAs quantum well
- Renormalization group approach for the scattering off a single Rashba impurity in a helical liquid
- Strong spin-orbit interaction and magnetotransport in semiconductor BiOSe nanoplates
- Insulating state and giant non-local response in an InAs/GaSb quantum well in the quantum Hall regime
- Random Rashba spin-orbit coupling at the quantum spin Hall edge
- Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry
- Quantum Coherence at Low Temperatures in Mesoscopic Systems: Effect of Disorder
- Giant spin-orbit splitting in inverted InAs/GaSb double quantum wells
- Weak antilocalization in high mobility Ga(x)In(1-x)As/InP two-dimensional electron gases with strong spin-orbit coupling
- Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells
- Spin-orbit interaction in a dual gated InAs/GaSb quantum well
- Anomalous Quantum Oscillations of Interacting Electron-hole Gases in Inverted Type-II InAs/GaSb Quantum Wells
- Spin-orbit interaction and weak localization in heterostructures
- Scattering, weak localization and Shubnikov-de Haas oscillation in high carrier density AlInN/GaN heterostructures
- Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures
- Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization
- Experimental determination of Rashba and Dresselhaus parameters and -factor anisotropy via Shubnikov-de Haas oscillations
- Resistive signature of excitonic coupling in an electron-hole double layer with a middle barrier
- Phase Slips and Parity Jumps in Quantum Oscillations of Inverted InAs/GaSb Quantum Wells
- Localization of trivial edge states in InAs/GaSb composite quantum wells
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