Anomalous spin-orbit effects in a strained InGaAs/InP quantum well structure

Abstract

There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We report results of a study of spin-orbit effects in a strained InGaAs/InP quantum well. The spin-orbit relaxation time, determined from the weak antilocalization effect, was found to depend non-monotonically on gate voltage. The spin orbit scattering rate had a maximum value of $5\times 10^{10}{s}^{-1}$ at an electron density of $n=3\times 10^{15}{m}^{-2}$. The scattering rate decreased from this for both increasing and decreasing densities. The smallest measured value was approximately $10^9{s}^{-1}$ at an electron concentration of $n=6\times 10^{15}{m}^{-2}$. This behavior could not be explained by either the Rashba nor the bulk Dresselhaus mechanisms but is attributed to asymmetry or strain effects at dissimilar quantum well interfaces.

arXiv commenttotal 12 pages including 4 figures

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Cited by in corpus (10)

• Experimental study of weak antilocalization effect in a high mobility InGaAs/InP quantum well
• Role of linear and cubic terms for the drift-induced Dresselhaus spin-orbit splitting in a two-dimensional electron gas
• Effect of an InP/In${}_{0.53}$Ga${}_{0.47}$As Interface on Spin-orbit Interaction in In${}_{0.52}$Al${}_{0.48}$As/In${}_{0.53}$Ga${}_{0.47}$As Heterostructures
• Electron spin-orbit splitting in InGaAs/InP quantum well studied by means of the weak antilocalization and spin-zero effects in tilted magnetic fields
• Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe${}_4$)${}_2$I
• Interaction-induced crossover between weak anti-localization and weak localization in a disordered InAs/GaSb double quantum well
• Phase Diagram of Quantum Hall Breakdown and Non-linear Phenomena for InGaAs/InP Quantum Wells
• Weak antilocalization in partially relaxed 200-nm HgTe films
• Activated and quantum creep of the charge-density waves in magnetic field in {\it o}-TaS${}_3$
• Weak antilocalization in a strained InGaAs/InP quantum well structure