179 citations · 444 across the 14 of their papers we have counts for
14 papers
Electron spin-orbit splitting in InGaAs/InP quantum well studied by means of the weak antilocalization and spin-zero effects in tilted magnetic fields
S. A. Studenikin, P. T. Coleridge, G. Yu +1
The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum well structure by means of simultaneous measure…
Weak antilocalization in a strained InGaAs/InP quantum well structure
S. A. Studenikin, P. T. Coleridge, P. J. Poole
Weak antilocalization (WAL) effect due to the interference corrections to the conductivity has been studied experimentally in a strained InGaAs/InP quantum well structure. From mea…
Microwave radiation induced magneto-oscillations in the longitudinal and transverse resistance of a two dimensional electron gas
S. A. Studenikin, M. Potemski, P. T. Coleridge +2
We confirm the existance of magneto-resistance oscillations in a microwave-irradiated two-dimensional electron gas, first reported in a series of papers by Zhudov et al. and Mani e…
Anomalous spin-orbit effects in a strained InGaAs/InP quantum well structure
S. A. Studenikin, P. T. Coleridge, P. Poole +1
There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials…
Metallic and Insulating behaviour in p-SiGe at nu = 3/2
P. T. Coleridge, R. L. Williams, J. Lapointe +1
Shubnikov-de Haas data is presented for a p-SiGe sample exhibiting strongly insulating behaviour at nu = 3/2. In addition to the fixed points defining a high field metal- insulator…
Experimental study of weak antilocalization effect in a high mobility InGaAs/InP quantum well
S. A. Studenikin, P. T. Coleridge, N. Ahmed +2
The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate vol…