Metal Insulator transition at B=0 in p-SiGe

Abstract

Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a resistivity that decreases exponentially with decreasing temperature. This behaviour, and the duality between resistivity and conductivity on the two sides of the transition, are very similar to that recently reported for high mobility Si-MOSFETs.

4 pages, REVTEX with 3 ps figures

References in corpus (4)

• Electric field scaling at a B=0 metal-insulator transition in two dimensions
• Scaling theory of two-dimensional metal-insulator transitions
• Unconventional Metallic State in Two Dimensional System With Broken Inversion Symmetry
• Reflection symmetry at a B=0 metal-insulator transition in two dimensions

Cited by in corpus (89)

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• Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers
• Transport in strongly correlated two dimensional electron fluids
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• The Effect of Spin Splitting on the Metallic Behavior of a Two-Dimensional System
• On the Theory of Metal-Insulator Transitions in Gated Semiconductors
• Unexpected Behavior of the Local Compressibility Near the B=0 Metal-Insulator Transition
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• Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs
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• Thermodynamic Signature of a Two-Dimensional Metal-Insulator Transition
• In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems
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• Weak localisation, hole-hole interactions and the "metal"-insulator transition in two dimensions
• Small Angle Shubnikov-de Haas Measurements in Silicon MOSFET's: the Effect of Strong In-Plane Magnetic Field
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• A New Liquid Phase and Metal-Insulator Transition in Si MOSFETs
• Holographic Axion Model: a simple gravitational tool for quantum matter
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• Metal-Insulator Transition of Disordered Interacting Electrons
• Metal-Insulator Transition in a Disordered Two-Dimensional Electron Gas in GaAs-AlGaAs at zero Magnetic Field
• Re-entrant insulator-metal-insulator transition at B=0 in a two dimensional hole gas
• In-plane Magnetoconductivity of Si-MOSFET's: A Quantitative Comparison between Theory and Experiment
• Possible triplet superconductivity in MOSFETs
• Novel Phenomena in Dilute Electron Systems in Two Dimensions
• Response to Parallel Magnetic Field of a Dilute 2D Electron System across the Metal-Insulator Transition
• Logarithmic Temperature Dependence of the Conductivity and Lack of Universal One-Parameter Scaling in the Two-Dimensional Metal
• Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells
• Influence of rhombohedral stacking order in the electrical resistance of bulk and mesoscopic graphite
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• On the Relation between Interband Scattering and the "Metallic Phase" of Two Dimensional Holes in GaAs/AlGaAs
• Effect of Local Magnetic Moments on the Metallic Behavior in Two Dimensions
• Scaling and the Metal-Insulator Transition in Si/SiGe Quantum Wells
• Two-dimensional metal-insulator-transition as a potential fluctuation driven semiclassical transport phenomenon
• Spin polarization of strongly interacting 2D electrons: the role of disorder
• Effect of Tilted Magnetic Field on the Anomalous H=0 Conducting Phase in High-Mobility Si MOSFETs
• Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers
• Fermi-liquid behaviour of the low-density 2D hole gas in GaAs/AlGaAs heterostructure at large values of r_s
• Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening
• Maximum Metallic Conductivity in Si-MOS Structures
• On the metallic behaviour in dilute two-dimensional systems
• Novel Properties of The Apparent Metal-Insulator Transition in Two-Dimensional Systems
• Two-species percolation and Scaling theory of the metal-insulator transition in two dimensions
• The energy scale behind the metallic behaviors in low-density Si-MOSFETs
• Low-field magnetoresistance in GaAs 2D holes
• An apparent metal insulator transition in high mobility 2D InAs heterostructures
• Novel metallic behavior in two dimensions
• Single and Paired Point Defects in a 2D Wigner Crystal
• Elastic Scattering as a Cause of Quantum Dephasing: The Conductance of Two-Dimensional Imperfect Conductors
• Magnetotransport and Complexity of Holographic Metal-Insulator Transitions
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• "Forbidden" transitions between quantum Hall and insulating phases in p-SiGe heterostructures
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• Comment on "Theory of metal-insulator transitions in gated semiconductors" (B. L. Altshuler and D. L. Maslov, Phys. Rev. Lett. 82, 145 (1999))
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• Levitation of the quantum Hall extended states in the $B\to$ 0 limit
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• Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System
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• Thermal correction to resistivity in dilute 2D systems
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• Surprising coincidence of the apparent 2D metal-to-insulator transition data with Fermi-gas based model results
• Physical interpretation of the spectral approach to delocalization in infinite disordered systems