Comment on "Theory of metal-insulator transitions in gated semiconductors" (B. L. Altshuler and D. L. Maslov, Phys. Rev. Lett. 82, 145 (1999))

Abstract

In a recent Letter, Altshuler and Maslov propose a model which attributes the anomalous temperature and field dependence of the resistivity of two-dimensional electron (or hole) systems to the charging and discharging of traps in the oxide (spacer), rather than to intrinsic behavior of interacting particles associated with a conductor-insulator transition in two dimensions. We argue against this model based on existing experimental evidence.

arXiv comment1 page; submitted to PRL

References in corpus (6)

• Metal-insulator transition at B=0 in a dilute two dimensional GaAs-AlGaAs hole gas
• The Metallic-Like Conductivity of a Two-Dimensional Hole System
• Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs/AlGaAs at B=0
• Metal Insulator transition at B=0 in p-SiGe
• On the Theory of Metal-Insulator Transitions in Gated Semiconductors
• Apparent Metallic Behavior at B = 0 of a two-dimensional electron system in AlAs

Cited by in corpus (10)

• Metallic behavior and related phenomena in two dimensions
• Metal-insulator transition in 2D: resistance in the critical region
• Nonmonotonic Temperature-dependent Resistance in Low Density 2D Hole Gases
• The 2D metal-insulator transition as a strong localization induced crossover phenomenon
• Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells
• Screening and transport in 2D semiconductor systems at low temperatures
• Two-species percolation and Scaling theory of the metal-insulator transition in two dimensions
• Formation of three-particle clusters in hetero-junctions and MOSFET structures
• Indications for sharp continuous phase transitions at finite temperatures connected with the apparent metal-insulator transition in two-dimensional disordered systems
• Deconstruction of the Trap Model for the New Conducting State in 2D