Metal-Insulator Transition in a Disordered Two-Dimensional Electron Gas in GaAs-AlGaAs at zero Magnetic Field
arXiv:cond-mat/9808276 · doi:10.1103/PhysRevLett.82.996
Abstract
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e^2 and critical carrier densities of 1.2 10^11cm^-2. Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.
4 pages, 3 figures, 21 references
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Cited by in corpus (20)
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- On the Cooling of Electrons in a Silicon Inversion Layer
- Effect of Local Magnetic Moments on the Metallic Behavior in Two Dimensions
- Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers
- Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening
- Two-species percolation and Scaling theory of the metal-insulator transition in two dimensions
- The energy scale behind the metallic behaviors in low-density Si-MOSFETs
- Destruction of diagonal and off-diagonal long range order by disorder in two-dimensional hard core boson systems
- Metal-insulator transition in two-dimensional disordered systems with power-law transfer terms
- Novel metallic behavior in two dimensions
- Quantum phase transitions in two-dimensional systems
- Delocalized Coulomb phase in two dimensions
- Metal-insulator transition in 2D: a role of the upper Habbard band
- Analysis of the temperature-dependent quantum point contact conductance in view of the metal-insulator transition in two dimensions
- Optically Loaded Semiconductor Quantum Memory Register
- Short Range Interaction Effects on the Density of States of Disordered Two Dimensional Crystals with a half--filled band
- Anomalous quantum Hall conductivity and resonances in coupled layers