Optically Loaded Semiconductor Quantum Memory Register

Abstract

We propose and analyze an optically loaded quantum memory exploiting capacitive coupling between self-assembled quantum dot molecules and electrically gated quantum dot molecules. The self-assembled dots are used for spin-photon entanglement, which is transferred to the gated dots for long-term storage or processing via a teleportation process heralded by single-photon detection. We illustrate a device architecture enabling this interaction and we outline its operation and fabrication. We provide self-consistent Poisson-Schroedinger simulations to establish the design viability and refine the design, and to estimate the physical coupling parameters and their sensitivities to dot placement. The device we propose generates heralded copies of an entangled state between a photonic qubit and a solid-state qubit with a rapid reset time upon failure. The resulting fast rate of entanglement generation is of high utility for heralded quantum networking scenarios involving lossy optical channels.

16 pages, 5 figures

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Cited by in corpus (6)

• Phase-tuned entangled state generation between distant spin qubits
• Roadmap on quantum nanotechnologies
• Roadmap for gallium arsenide spin qubits
• Design and Analysis of Communication Protocols for Quantum Repeater Networks
• Closed-loop control of a GaAs-based singlet-triplet spin qubit with 99.5% gate fidelity and low leakage
• Resonant Exchange Operation in Triple-Quantum-Dot Qubits for Spin-Photon Transduction