Single photo-electron trapping, storage, and detection in a one-electron quantum dot

Abstract

There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We report the filling of such a quantum dot by a single photo-electron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photo-electron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photo-electron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photo-electron detector could allow for information transfer between flying photon qubits and stored electron qubits.

4 Pages, 5 Figures

References in corpus (5)

• Single-shot read-out of an individual electron spin in a quantum dot
• Few-Electron Quantum Dot Circuit with Integrated Charge Read-Out
• Charge Distribution in a Kondo Correlated Quantum Dot
• A single photoelectron transistor for quantum optical communications
• Photoconductance Quantization in a Single-Photon Detector

Cited by in corpus (3)

• Quantum state transfer of angular momentum via single electron photo-excitation from a Zeeman-resolved light hole
• Optically Loaded Semiconductor Quantum Memory Register
• Photogalvanic effect and photoconductance in a quantum channel with a single short-range scatterer