A single photoelectron transistor for quantum optical communications

Abstract

A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The electron trap can be photo-ionized and repeatedly reset for the arrival of successive individual photons. This single photoelectron transistor (SPT) operating at the lambda = 1.3 mu m tele-communication band, was demonstrated by using a windowed-gate double-quantum-well InGaAs/InAlAs/InP heterostructure that was designed to provide near-zero electron g-factor. The g-factor engineering allows selection rules that would convert a photon's polarization to an electron spin polarization. The safe arrival of the photo-electric charge would trigger the commencement of the teleportation algorithm.

References in corpus (2)

• Electron g-factor Engineering in III-V Semiconductors for Quantum Communications
• Photoconductance Quantization in a Single-Photon Detector

Cited by in corpus (8)

• Coherent transfer of light polarization to electron spins in a semiconductor
• Quantum state transfer of angular momentum via single electron photo-excitation from a Zeeman-resolved light hole
• Single photo-electron trapping, storage, and detection in a one-electron quantum dot
• Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor
• Photogalvanic effect and photoconductance in a quantum channel with a single short-range scatterer
• Effect of exchange interaction on fidelity of quantum state transfer from a photon qubit to an electron-spin qubit
• Theoretical analysis of the optimal conditions for photon-spin quantum state transfer
• Photon-arrival detector with a controlled phase flip operation between a photon and a V-type atomic system