Effect of Tilted Magnetic Field on the Anomalous H=0 Conducting Phase in High-Mobility Si MOSFETs

Abstract

The suppression by a magnetic field of the anomalous H=0 conducting phase in high-mobility silicon MOSFETs is independent of the angle between the field and the plane of the 2D electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered GaAs/AlGaAs heterostructures: the system is insulating in zero (perpendicular) field and exhibits reentrant insulator-quantum Hall effect-insulator transitions as a function of perpendicular field. The results demonstrate that the suppression of the low-T phase is related only to the electrons' spin.

4 pages, including 3 figures. We corrected several typos in the figures and captions

References in corpus (8)

• Metal-insulator transition at B=0 in a dilute two dimensional GaAs-AlGaAs hole gas
• The Metallic-Like Conductivity of a Two-Dimensional Hole System
• Metal Insulator transition at B=0 in p-SiGe
• Metallic Phase and Metal-insulator Transition in 2d Electronic Systems
• Instability of the Two-Dimensional Metallic Phase to Parallel Magnetic Field
• A New Liquid Phase and Metal-Insulator Transition in Si MOSFETs
• Quantum interference and electron-electron interactions at strong spin-orbit coupling in disordered systems
• Interactions and Scaling in a Disordered Two-Dimensional Metal

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• Magnetic-Field-Driven Superconductor-Insulator-Type Transition in Graphite
• Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon
• Absence of Metal-Insulator-Transition and Coherent Interlayer Transport in oriented graphite in parallel magnetic fields
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• Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems
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• A metal-insulator transition in 2D: Established facts and open questions
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• Universal scaling, beta function, and metal-insulator transitions
• Does spin-orbit coupling play a role in metal-nonmetal transition in two-dimensional systems?
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• Phase Separation in Two-Dimensional Electron Systems: Experimental View
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