Thermal correction to resistivity in dilute 2D systems

Abstract

We calculate the resistivity of 2D electron (hole) gas, taking into account the degeneracy and the thermal correction due to the combined Peltier and Seebeck effects. The resistivity is found to be universal function of temperature, expressed in units of $\frac{h}{e^2}(k_{F}l{)}^{-1}$. The giant parallel magnetiresistivity found to result from the spin and, if exists, valley splitting of the energy spectrum. Our analysis of compressibility and thermopower points to thermodynamic nature of metal-insulator transition in 2D systems.

5 pages, 4 figures, ICPS'26, D113, Edinburgh, UK

References in corpus (7)

• The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
• Interaction corrections at intermediate temperatures: magneto-resistance in parallel field
• Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures
• Interaction Corrections to Two-Dimensional Hole Transport in Large $r_s$ Limit
• Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs
• Two-dimensional metal in a parallel magnetic field
• The relative importance of electron-electron interactions compared to disorder in the two-dimensional "metallic" state

Cited by in corpus (2)

• Surprising coincidence of the apparent 2D metal-to-insulator transition data with Fermi-gas based model results
• Magnetotransport in 2D electron systems with a Rashba spin-orbit interaction