Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers

Abstract

The temperature and density dependence of the phase coherence time ${\tau }_{\varphi }$ in high-mobility silicon inversion layers was determined from the magnetoresistivity due to weak localization. The upper temperature limit for single-electron quantum interference effects was delineated by comparing ${\tau }_{\varphi }$ with the momentum relaxation time $\tau$. A comparison between the density dependence of the borders for quantum interference effects and the strong resistivity drop reveals that theses effects are not related to each other. As the strong resistivity drop occurs in the Drude regime, the apparent metallic behavior can not be caused by quantum coherent effects.

arXiv comment4 pages, 3 figs, LaTeX; new title, stronger conclusions

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Cited by in corpus (20)

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• In-plane Magnetoconductivity of Si-MOSFET's: A Quantitative Comparison between Theory and Experiment
• Magnetoresistance and dephasing in a two-dimensional electron gas at intermediate conductances
• On the Cooling of Electrons in a Silicon Inversion Layer
• Resistance Noise Scaling in a Dilute Two-Dimensional Hole System in GaAs
• The energy scale behind the metallic behaviors in low-density Si-MOSFETs
• Coherent back-scattering near the two-dimensional metal-insulator transition
• Quantum decoherence of interacting electrons in arrays of quantum dots and diffusive conductors
• Intervalley scattering and weak localization in Si-based two-dimensional structures
• The relative importance of electron-electron interactions compared to disorder in the two-dimensional "metallic" state
• Novel Energy Scale in the Interacting 2D Electron System Evidenced from Transport and Thermodynamic Measurements
• Signatures of localization in the effective metallic regime of high mobility Si MOSFETs
• Comment on "Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures"
• Phase Separation in Two-Dimensional Electron Systems: Experimental View
• Thermal correction to resistivity in dilute 2D systems
• Metallic behaviour in SOI quantum wells with strong intervalley scattering
• Charge Transport in a Spin-Polarized 2D Electron System in Silicon