Coherent back-scattering near the two-dimensional metal-insulator transition

Abstract

We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon approaching to the transition and practically vanish at the critical density, thus suggesting that the localization is suppressed near and at the transition even in zero field.

to appear in PRL

References in corpus (1)

• Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system

Cited by in corpus (5)

• Metal-insulator transition in two-dimensional electron systems
• Intervalley scattering and weak localization in Si-based two-dimensional structures
• Spontaneous breaking of time reversal symmetry in strongly interacting two dimensional electron layers in silicon and germanium
• Signatures of localization in the effective metallic regime of high mobility Si MOSFETs
• Universal transport at Lifshitz metal-insulator transitions in two dimensions