Coherent back-scattering near the two-dimensional metal-insulator transition

Abstract

We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon approaching to the transition and practically vanish at the critical density, thus suggesting that the localization is suppressed near and at the transition even in zero field.

arXiv commentto appear in PRL

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Cited by in corpus (11)

• Metal-insulator transition in two-dimensional electron systems
• Magnetoresistance and dephasing in a two-dimensional electron gas at intermediate conductances
• Intervalley scattering and weak localization in Si-based two-dimensional structures
• Spontaneous breaking of time reversal symmetry in strongly interacting two dimensional electron layers in silicon and germanium
• Signatures of localization in the effective metallic regime of high mobility Si MOSFETs
• Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs
• Renormalization group study of intervalley scattering and valley splitting in a two-valley system
• Renormalization group study of a two-valley system with spin-splitting
• Termination of two-dimensional metallic conduction near metal-insulator transition in a Si/SiGe quantum well
• Non-Gaussian Spatial Correlations Dramatically Weaken Localization
• Universal transport at Lifshitz metal-insulator transitions in two dimensions