259 citations · 889 across the 17 of their papers we have counts for
18 papers
On the two-dimensional metallic state in silicon-on-insulator structures
G. Brunthaler, A. Prinz, G. Pillwein +2
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconduct…
Reply to Comment on "Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers"
V. M. Pudalov, G. Brunthaler, A. Prinz +1
Reply to the Comment by V.T. Dolgopolov and A.V. Gold [cond-mat/0203276].
Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"
V. M. Pudalov, M. Gershenson, H. Kojima +5
Reply to the Comment by S.V. Kravchenko, A.A. Shashkin, and V.T. Dolgopolov [cond-mat/0106056]
Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures
V. M. Pudalov, M. E. Gershenson, H. Kojima +3
We compare the temperature dependence of resistivity ρ(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective…
The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
V. M. Pudalov, M. E. Gershenson, H. Kojima +5
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities cm, which includes…
Valley Splitting in Si-Inversion Layers at Low Magnetic Fields
V. M. Pudalov, A. Punnoose, G. Brunthaler +2
We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes…