Maximum Metallic Conductivity in Si-MOS Structures

Abstract

We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, G_{max}, as either density increases or temperature decreases. This value G_{max} is weakly disorder dependent and ranging from 100 to 140 e^2/h for samples whose mobilities differ by a factor of 4.

3 pages, 3 ps-figs, RevTex, new data

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Cited by in corpus (21)

• Metallic behavior and related phenomena in two dimensions
• Singular Fermi Liquids
• Onset of Glassy Dynamics in a Two-Dimensional Electron System in Silicon
• Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells
• On the Cooling of Electrons in a Silicon Inversion Layer
• Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers
• Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening
• On the metallic behaviour in dilute two-dimensional systems
• Two-species percolation and Scaling theory of the metal-insulator transition in two dimensions
• The energy scale behind the metallic behaviors in low-density Si-MOSFETs
• Notes on Decoherence at Absolute Zero
• Novel metallic behavior in two dimensions
• Novel Energy Scale in the Interacting 2D Electron System Evidenced from Transport and Thermodynamic Measurements
• Signatures of localization in the effective metallic regime of high mobility Si MOSFETs
• Two-dimensional system of strongly interacting electrons in silicon (100) structures
• Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation
• Magnetic-field-driven redistribution between extended and localized electronic states in high-mobility Si MOSFETs at low temperatures
• Phase Separation in Two-Dimensional Electron Systems: Experimental View
• Emergence of quasi-metallic state in disordered 2D electron gas due to strong interactions
• Surprising coincidence of the apparent 2D metal-to-insulator transition data with Fermi-gas based model results
• Metal-insulator transition in 2D: the role of interactions and disorder