Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation

Abstract

For five different electron and hole systems in two dimensions (Si MOSFET's, p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density, $n_c$ that marks the onset of strong localization is shown to be a single power-law function of the scattering rate $1/\tau$ deduced from the maximum mobility. The resulting curve defines the boundary separating a localized phase from a phase that exhibits metallic behavior. The critical density $n_c\to 0$ in the limit of infinite mobility.

2 pages, 1 figure

References in corpus (3)

• In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems
• Spin Polarization of Two-Dimensional Electrons Determined from Shubnikov-de Haas Oscillations as a Function of Angle
• Valley Splitting in Si-Inversion Layers at Low Magnetic Fields

Cited by in corpus (8)

• Metal-insulator transition in two-dimensional electron systems
• Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures
• The 2D metal-insulator transition as a strong localization induced crossover phenomenon
• Screening and transport in 2D semiconductor systems at low temperatures
• Resistance Noise Scaling in a Dilute Two-Dimensional Hole System in GaAs
• Density-tuned effective metal-insulator transitions in 2D semiconductor layers: Anderson localization or Wigner crystallization
• Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells
• Anderson localization crossover in 2D Si systems: The past and the present