Logarithmic Temperature Dependence of the Conductivity and Lack of Universal One-Parameter Scaling in the Two-Dimensional Metal

Abstract

We show that the two-dimensional metallic state in Si-MOS samples persists over a wide range of temperatures (16 mK to 8 K), sample peak mobilities (varying by a factor of 8), carrier densities (0.8 to $35\times 10^{11}$ cm${}^{-2}$) and conductances from 0.3 to $120e^2/h$. Our data reveal a failure of the universal one-parameter scaling. We have found a weak delocalizing logarithmic correction to the conductivity, which governs a weak increase in the conductivity of the 2D metal as $T$ approaches zero.

5 pages, RevTeX, 3 ps figures, modified version

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• Screening Breakdown on the Route toward the Metal-Insulator Transition in Modulation Doped Si/SiGe Quantum Wells
• Metal-Insulator Transition in 2D: Experimental Test of the Two-Parameter Scaling
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• Notes on Decoherence at Absolute Zero
• Critical Behavior of a Strongly Disordered 2D Electron System: The Cases of Long-Range and Screened Coulomb Interactions
• Novel metallic behavior in two dimensions
• Signatures of localization in the effective metallic regime of high mobility Si MOSFETs
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• Anderson localization crossover in 2D Si systems: The past and the present
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• Metal-insulator transition in a two-dimensional electron system: the orbital effect of in-plane magnetic field
• Deconstruction of the Trap Model for the New Conducting State in 2D
• Glass Transition in a Two-Dimensional Electron System in Silicon in a Parallel Magnetic Field