Metal-Insulator Transition in 2D: Experimental Test of the Two-Parameter Scaling

Abstract

We report a detailed scaling analysis of resistivity ρ(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and general scaling ideas. This enables us to determine the critical electron density, two critical indices, and temperature dependence for the separatrix in the self-consistent manner. In addition, we reconstruct the empirical scaling function describing a two-parameter surface which fits well the ρ(T,n) data.

4 pages, 4 figures, 1 table

References in corpus (5)

• Metal-insulator transition in two-dimensional electron systems
• Metal-Insulator Transition in Disordered Two-Dimensional Electron Systems
• Flow diagram of the metal-insulator transition in two dimensions
• Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition
• Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime

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