Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime

Abstract

High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity ${\rho }_{xx}$ near the critical filling factor ${\nu }_c$ ~ 0.5 follows the universal scaling law ${\rho }_{xx}(\nu ,T)\propto exp[-\Delta \nu /(T/T_0{)}^{\kappa }]$, where $\Delta \nu =\nu -{\nu }_c$. The critical exponent $\kappa$ equals $0.56\pm 0.02$, which indicates that the plateau-insulator transition falls in a non-Fermi liquid universality class.

8 pages, accepted for publication in Proceedings of the Yamada Conference LX on Research in High Magnetic Fields (August 16-19, 2006, Sendai)

Cited by in corpus (8)

• Anderson Transitions
• Study of the electronic properties of topological kagome metals YV${}_6$Sn${}_6$ and GdV${}_6$Sn${}_6$
• Highly anisotropic magnetism in the vanadium-based kagome metal TbV6Sn6
• Quantum criticality at the Chern-to-normal insulator transition
• Quantum-Hall to Insulator Transition in Ultra-low-carrier-density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level
• Three-dimensional quasi-quantized Hall insulator phase in SrSi2
• A microscopic model for the magnetic field driven breakdown of the dissipationless state in the integer and fractional quantum Hall effect
• Supersymmetry approach to delocalization transitions in a network model of the weak field quantum Hall effect and related models