Characterization of the Quantized Hall Insulator Phase in the Quantum Critical Regime

Abstract

The conductivity $\sigma$ and resistivity $\rho$ tensors of the disordered Hofstadter model are mapped as functions of Fermi energy $E_F$ and temperature $T$ in the quantum critical regime of the plateau-insulator transition (PIT). The finite-size errors are eliminated by using the non-commutative Kubo-formula. The results reproduce all the key experimental characteristics of this transition in Integer Quantum Hall (IQHE) systems. In particular, the Quantized Hall Insulator (QHI) phase is detected and analyzed. The presently accepted characterization of the QHI phase in the quantum critical regime, based entirely on experimental data, is fully supported by our theoretical investigation.

The scaling functions were computed and the data was extrapolated to T=0. The Quantized Hall Insulator phase disappears at T=0

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Cited by in corpus (9)

• Disorder Effects in Topological States -- Brief Review of the Recent Developments
• Disordered Crystals from First Principles I: Quantifying the Configuration Space
• Random network models with variable disorder of geometry
• Anderson Localization and Quantum Hall Effect: Numerical Observation of Two Parameter Scaling
• The scaling behavior of the insulator to plateau transition in topological band model
• Disordered Crystals from First Principles II: Transport Coefficients
• Mapping the Current-Current Correlation Function Near a Quantum Critical Point
• Observation of anti-levitation of Landau levels in vanishing magnetic fields
• Conformal energy currents on the edge of a topological superconductor