Observation of anti-levitation of Landau levels in vanishing magnetic fields

Abstract

We report an anti-levitation behavior of Landau levels in vanishing magnetic fields in a high quality hetero-junction insulated-gated field-effect transistor. We found, in the Landau fan diagram of electron density versus magnetic field, the positions of the magneto-resistance minima at Landau level fillings ν=4, 5, 6 move below the 'traditional' Landau level line to lower electron densities. Moreover, the even and odd filling factors show quantitatively different behaviors in anti-levitation, suggesting that the exchange interactions may be important.

References in corpus (2)

• Characterization of the Quantized Hall Insulator Phase in the Quantum Critical Regime
• Anti-Levitation in the Integer Quantum Hall Systems

Cited by in corpus (2)

• Integer Quantum Hall Effect: Disorder, temperature, floating, and plateau width
• Resistively loaded coplanar waveguide for microwave measurements of induced carriers