Two dimensional electrons in (100) oriented silicon field effect structures in the region of low concentrations and high mobilities

Abstract

A comparative analysis of experimental data on electron transport in Si (100) MOSFETs in the region of high mobilities and strong electronelectron interaction is carried out. It is shown that electrons can be described by the model of a noninteracting gas with the renormalized mass and Lande factor, which allows experimentally verifiable predictions.

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Cited by in corpus (7)

• Indication of band flattening at the Fermi level in a strongly correlated electron system
• Metal-insulator transition and low-density phases in a strongly-interacting two-dimensional electron system
• Two-dimensional system of strongly interacting electrons in silicon (100) structures
• Interaction-induced merging of Landau levels in an electron system of double quantum wells
• Band Flattening and Landau Level Merging in Strongly-Correlated Two-Dimensional Electron Systems
• Stoner Magnetism in an Inversion Layer
• Stoner-type theory of Magnetism in Silicon MOSFETs