activity
19982011
most citedMetal-Insulator Transition in 2D: Experimental Test of the Two-Parameter Scaling

39 citations · 166 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci2011★ 7 cited

Synthesis of novel rare earth - iron oxide chalcogenides with the La2Fe2O3Se2 structure

D. O. Charkin, V. A. Plotnikov, A. V. Sadakov +2

Our searches for new oxide chalcogenides of rare earths and Fe, Co, Ni, and Zn resulted in preparation of two new compounds Ce2Fe2O3S2 and Pr2Fe2O3S2 which are isostructural to La2…

cond-mat.mtrl-sci2011★ 23 cited

Synthesis, crystal structure, and properties of novel perovskite oxychalcogenides, Ca2CuFeO3Ch (Ch = S, Se)

D. O. Charkin, A. V. Sadakov, O. E. Omel'yanovskii +1

Two new perovskite oxychalcogenides, Ca2CuFeO3S and Ca2CuFeO3Se, have been synthesized in evacuated quartz tubes. They crystallize in P4/nmm space group with lattice parameters a =…

cond-mat.supr-con2011★ 23 cited

Observation of Multi-Gap Superconductivity in GdO(F)FeAs by Andreev Spectroscopy

T. E. Shanygina, Ya. G. Ponomarev, S. A. Kuzmichev +9

We have studied current-voltage characteristics of Andreev contacts in polycrystalline GdOFFeAs samples with bulk critical temperature = (52.5 \pm 1)K usi…

cond-mat.dis-nn2008★ 35 cited

Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers

N. N. Klimov, D. A. Knyazev, O. E. Omel'yanovskii +3

We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2…

cond-mat.str-el2008★ 39 cited

Metal-Insulator Transition in 2D: Experimental Test of the Two-Parameter Scaling

D. A. Knyazev, O. E. Omel'yanovskii, V. M. Pudalov +1

We report a detailed scaling analysis of resistivity ρ(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed…

cond-mat.str-el2006★ 20 cited

Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition

D. A. Knyazev, O. E. Omelyanovskii, V. M. Pudalov +1

We report on studies of the magnetoresistance in strongly correlated 2D electron system in Si in the critical regime, in the close vicinity of the 2D metal-insulator transition. We…