Critical Behavior in Doping-Driven Metal$-$Insulator Transition on Single-Crystalline Organic Mott-FET

Abstract

We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator $\kappa$-(BEDT-TTF)${}_2$CuN(CN)${}_2$Cl ($\kappa$-Cl).The FET shows a continuous metal$-$insulator transition (MIT) as electrostatic doping proceeds. The phase transition appears to involve two-step crossovers, one in Hall measurement and the other in conductivity measurement. The crossover in conductivity occurs around the conductance quantum $e^2/h$ , and hence is not associated with "bad metal" behavior, which is in stark contrast to the MIT in half-filled organic Mott insulators or that in doped inorganic Mott insulators. Through in-depth scaling analysis of the conductivity, it is found that the above carrier transport properties in the vicinity of the MIT can be described by a high-temperature Mott quantum critical crossover, which is theoretically argued to be a ubiquitous feature of various types of Mott transitions. [This document is the unedited Authors' version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright ©American Chemical Society after peer review. To access the final edited and published work see http://dx.doi.org/10.1021/acs.nanolett.6b03817]

40 pages, 16 figures in Nano Letters, ASAP (2017)

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• Two-dimensional ground-state mapping of a Mott-Hubbard system in a flexible field-effect device