Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior

Abstract

We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing experimental data in several different systems and address the origin of the strong and non-monotonic temperature dependent resistivity.

Presented at SIMD, Dec. 1999 in Hawaii. To be published in Superlattices and Microstructures, May 2000 issue

Cited by in corpus (3)

• The so-called two dimensional metal-insulator transition
• The relative importance of electron-electron interactions compared to disorder in the two-dimensional "metallic" state
• Collision-dominated conductance in clean 2D metals