activity
20022011
most citedInfluence of electron-acoustic phonon scattering on off-resonant cavity feeding within a strongly coupled quantum-dot cavity system

79 citations · 176 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2011★ 79 cited

Influence of electron-acoustic phonon scattering on off-resonant cavity feeding within a strongly coupled quantum-dot cavity system

S. Hughes, P. Yao, F. Milde +9

We present a medium-dependent quantum optics approach to describe the influence of electron-acoustic phonon coupling on the emission spectra of a strongly coupled quantum-dot cavit…

cond-mat.mes-hall2010★ 1 cited

Non-linear magnetotransport phenomena in high-mobility two-dimensional electrons in InGaAs/InP and GaAs/AlGaAs

S. A. Studenikin, G. Granger, A. Kam +3

This paper reports on the observation and analysis of magnetotransport phenomena in the nonlinear differential resistance of high-mobility InGaAs/InP and GaAs/A…

cond-mat.mes-hall2010★ 2 cited

Few-electron quantum dots in III-V ternary alloys: role of fluctuations

G. Granger, S. A. Studenikin, A. Kam +2

We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the c…

cond-mat.mes-hall2009★ 3 cited

Electron transport in gated InGaAs and InAsP quantum well wires in selectively-grown InP ridge structures

G. Granger, A. Kam, S. A. Studenikin +4

The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures th…

cond-mat.mes-hall2003★ 22 cited

Anomalous spin-orbit effects in a strained InGaAs/InP quantum well structure

S. A. Studenikin, P. T. Coleridge, P. Poole +1

There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials…

cond-mat.mes-hall2002★ 69 cited

Experimental study of weak antilocalization effect in a high mobility InGaAs/InP quantum well

S. A. Studenikin, P. T. Coleridge, N. Ahmed +2

The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate vol…