Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization
arXiv:1610.09749 · doi:10.1103/PhysRevB.95.155307
Abstract
We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findings with recent work on this material system and show that the SOI length lies within the same range. The SOI length may be controlled using an electrostatic gate, opening up prospects for developing spintronic applications.
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Cited by in corpus (8)
- Transport Properties of Near Surface InAs Two-dimensional Heterostructures
- Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers
- Crossover Between Weak Antilocalization and Weak Localization and Electron-Electron Interaction in Few-Layer WTe
- Enhanced Rashba spin-orbit coupling in core-shell nanowires by the interfacial effect
- Interaction-induced crossover between weak anti-localization and weak localization in a disordered InAs/GaSb double quantum well
- Magneto-anisotropic weak antilocalization in near-surface quantum wells
- Inducing ferromagnetism by structural engineering in a strongly spin-orbit coupled oxide
- Enhancement of the topological regime in elongated Josephson junctions