Weak localization and spin splitting in inversion layers on p-type InAs

Abstract

We report on the magnetoconductivity of quasi two-dimensional electron systems in inversion layers on p-type InAs single crystals. In low magnetic fields pronounced features of weak localization and antilocalization are observed. They are almost perfectly described by the theory of Iordanskii, Lyanda-Geller and Pikus. This allows us to determine the spin splitting and the Rashba parameter of the ground electric subband as a function of the electron density.

Accepted for publication in Phys. Rev. B, 4 pages

References in corpus (2)

• Weak Antilocalization and Spin Precession in Quantum Wells
• Weak localisation in AlGaAs/GaAs p-type quantum wells

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• Sensitively Temperature-Dependent Spin Orbit Coupling in SrIrO3 Thin Films
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• Spin-orbit interaction and weak localization in heterostructures
• Electron spin-orbit splitting in InGaAs/InP quantum well studied by means of the weak antilocalization and spin-zero effects in tilted magnetic fields
• Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization
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• Weak antilocalization effect of high-mobility two-dimensional electron gas in inversion layer on p-type HgCdTe
• Magneto-anisotropic weak antilocalization in near-surface quantum wells
• Large Rashba parameter for 4d strongly correlated perovskite oxide SrNbO3 ultrathin films
• Spin conversion rates due to dipolar interactions in mono-isotopic quantum dots at vanishing spin-orbit coupling