128 citations · 552 across the 11 of their papers we have counts for
11 papers
superconducting quantum interference through trivial edge states in InAs
Folkert K. de Vries, Tom Timmerman, Viacheslav P. Ostroukh +11
Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge…
Magnetic Field Evolution of Spin Blockade in Ge/Si Nanowire Double Quantum Dots
Azarin Zarassi, Zhaoen Su, Jeroen Danon +6
We perform transport measurements on double quantum dots defined in Ge/Si core/shell nanowires and focus on Pauli spin blockade in the regime where tens of holes occupy each dot. W…
High critical magnetic field superconducting contacts to Ge/Si core/shell nanowires
Zhaoen Su, Azarin Zarassi, Binh-Minh Nguyen +3
Contacts between high critical field superconductors and semiconductor nanowires are important in the context of topological quantum circuits in which superconductivity must be sus…
Quantized conductance and large g-factor anisotropy in InSb quantum point contacts
Fanming Qu, Jasper van Veen, Folkert K. de Vries +10
Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fe…
Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry
Binh-Minh Nguyen, Andrey A. Kiselev, Ramsey Noah +13
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this th…
Giant spin-orbit splitting in inverted InAs/GaSb double quantum wells
Fabrizio Nichele, Morten Kjaergaard, Henri J. Suominen +11
Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the in…
Edge Transport in the Trivial Phase of InAs/GaSb
Fabrizio Nichele, Henri J. Suominen, Morten Kjaergaard +16
We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow i…
Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
Wei Yi, Andrey A. Kiselev, Jacob Thorp +13
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of…
Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
Fanming Qu, Arjan J. A. Beukman, Stevan Nadj-Perge +9
Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases…
High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate
Binh-Minh Nguyen, Wei Yi, Ramsey Noah +2
We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in exce…
Thermal conductivity of InAs/GaSb superlattice
Chuanle Zhou, B. -M. Nguyen, M. Razeghi +1
The cross-plane thermal conductivity of a type II InAs/GaSb superlattice (T2SL) is measured from 13 K to 300 K using the 3ω method. Thermal conductivity is reduced by up to 2 order…