activity
20112017
most citedEdge Transport in the Trivial Phase of InAs/GaSb

128 citations · 552 across the 11 of their papers we have counts for

collaborators
Showing 2014Show all

1 paper · 1 filter

cond-mat.mes-hall2014★ 19 cited

High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

Binh-Minh Nguyen, Wei Yi, Ramsey Noah +2

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in exce…