76 citations · 249 across the 6 of their papers we have counts for
6 papers
A flexible design platform for Si/SiGe exchange-only qubits with low disorder
Wonill Ha, Sieu D. Ha, Maxwell D. Choi +14
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an e…
Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
Edward H. Chen, Kate Raach, Andrew Pan +16
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximiz…
Magnetic Gradient Fluctuations from Quadrupolar Ge in Si/SiGe Exchange-Only Qubits
J. Kerckhoff, B. Sun, B. H. Fong +14
We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral…
Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry
Binh-Minh Nguyen, Andrey A. Kiselev, Ramsey Noah +13
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this th…
Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
Wei Yi, Andrey A. Kiselev, Jacob Thorp +13
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of…
High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate
Binh-Minh Nguyen, Wei Yi, Ramsey Noah +2
We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in exce…