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20142021
most citedA flexible design platform for Si/SiGe exchange-only qubits with low disorder

76 citations · 249 across the 6 of their papers we have counts for

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cond-mat.mes-hall2014★ 19 cited

High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

Binh-Minh Nguyen, Wei Yi, Ramsey Noah +2

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in exce…