Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure

Abstract

We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample for different current paths without the influence of time-dependent resistance fluctuations.

6 pages, 6 figures

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Cited by in corpus (31)

• Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
• Effects of nuclear spins on the transport properties of the edge of two-dimensional topological insulators
• Non-local transport via edge-states in InAs/GaSb coupled quantum wells
• Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry
• Helical Liquids in Semiconductors
• Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells
• Single-edge transport in an InAs/GaSb quantum spin Hall insulator
• Mesoscopic transport in two-dimensional topological insulators
• Engineering quantum spin Hall insulators by strained-layer heterostructures
• First principles feasibility assessment of a topological insulator at the InAs/GaSb interface
• Energy gap tuning and gate-controlled topological phase transition in InAs/In${}_x$Ga${}_{1-x}$Sb composite quantum wells
• Helical edge transport in the presence of a magnetic impurity: the role of local anisotropy
• The effect of in-plane magnetic field and applied strain in quantum spin Hall systems: application to InAs/GaSb quantum wells
• Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures
• Rashba Sandwiches with Topological Superconducting Phases
• Unrestricted electron bunching at the helical edge
• Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well
• Circular and Linear Photogalvanic Effects in Type-II GaSb/InAs Quantum Well Structures in the Inverted Regime
• Finite frequency backscattering current noise at a helical edge
• Transport through the network of topological channels in HgTe based quantum well
• Analytical and Numerical study of the out-of-equilibrium current through a helical edge coupled to a magnetic impurity
• Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well
• On the impact of strain on the electronic properties of InAs/GaSb quantum well systems
• Localization of trivial edge states in InAs/GaSb composite quantum wells
• Electrically controlled crossing of energy levels in quantum dots in two-dimensional topological insulators
• Electric field-induced edge state oscillations in GaSb/InAs quantum wells
• Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells
• Electrical tuning of helical edge states in topological multilayers
• Electronic thermal conductivity in 2D topological insulator in a HgTe quantum well
• Unidirectional magneto-transport of linearly dispersing topological edge states
• Strongly Correlated Transport in Topological Y-Junction Devices