Strongly Correlated Transport in Topological Y-Junction Devices

Abstract

I analyze electron transport through a Y-junction formed by helical edge states of a two-dimensional topological insulator (2DTI), focusing on the strongly interacting regime. An experimentally motivated device geometry and a spin-conserving tunneling Hamiltonian are proposed. I compute the conductance tensor and show that, for specific tunneling phases and strong repulsive interactions ($g<1/2$), transport is governed by an intermediate renormalization group fixed point that interpolates between the weak- and strong-tunneling limits. These results extend previous studies of point-contact tunneling and demonstrate how interactions qualitatively modify the transport properties of multiterminal topological devices.

arXiv comment15 pages, 9 figures, improved abstract, introductionn and conclusion, fixed references and typos

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