activity
20132020
most citedEdge Channel Transport in InAs/GaSb Topological Insulating Phase

138 citations · 244 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2020★ 23 cited

Energy gap tuning and gate-controlled topological phase transition in InAs/InGaSb composite quantum wells

H. Irie, T. Akiho, F. Couëdo +3

We report transport measurements of strained InAs/InGaSb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap thro…

cond-mat.mes-hall2019

Pseudospin Berry phase as a signature of nontrivial band topology in a two-dimensional system

F. Couëdo, H. Irie, T. Akiho +3

Electron motion in crystals is governed by the coupling between crystal momentum and internal degrees of freedom such as spin implicit in the band structure. The description of thi…

cond-mat.mes-hall2016★ 37 cited

Single-edge transport in an InAs/GaSb quantum spin Hall insulator

François Couëdo, Hiroshi Irie, Kyoichi Suzuki +2

We report transport measurements in a single edge channel of an InAs/GaSb quantum spin Hall insulator, where the conduction occurs through only one pair of counterpropagating edge…

cond-mat.mes-hall2015★ 46 cited

Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure

Kyoichi Suzuki, Yuichi Harada, Koji Onomitsu +1

We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion…

cond-mat.mes-hall2013★ 138 cited

Edge Channel Transport in InAs/GaSb Topological Insulating Phase

Kyoichi Suzuki, Yuichi Harada, Koji Onomitsu +1

Transport in InAs/GaSb heterostructures with different InAs layer thicknesses is studied using a six-terminal Hall bar geometry with a 2-m edge channel length. For a sample with…