activity
20162020
most citedSingle-edge transport in an InAs/GaSb quantum spin Hall insulator

37 citations · 69 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall202010 cited

Suppression of Gate Screening on Edge Magnetoplasmons by Highly Resistive ZnO Gate

N. Kumada, N. -H. Tu, K. -i. Sasaki +5

We investigate a way to suppress high-frequency coupling between a gate and low-dimensional electron systems in the gigahertz range by measuring the velocity of edge magnetoplasmon…

cond-mat.mes-hall20205 cited

Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells

H. Irie, T. Akiho, F. Couëdo +4

We study the influence of epitaxial strain on the electronic properties of InAs/GaSb composite quantum wells (CQWs), host structures for quantum spin Hall insulators, by transport…

cond-mat.mes-hall201917 cited

Counterflowing edge current and its equilibration in quantum Hall devices with sharp edge potential: Roles of incompressible strips and contact configuration

T. Akiho, H. Irie, K. Onomitsu +1

We report the observation of counterflowing edge current in InAs quantum wells which leads to the breakdown of quantum Hall (QH) effects at high magnetic fields. Counterflowing edg…

cond-mat.mes-hall2019

Pseudospin Berry phase as a signature of nontrivial band topology in a two-dimensional system

F. Couëdo, H. Irie, T. Akiho +3

Electron motion in crystals is governed by the coupling between crystal momentum and internal degrees of freedom such as spin implicit in the band structure. The description of thi…

cond-mat.mes-hall201637 cited

Single-edge transport in an InAs/GaSb quantum spin Hall insulator

François Couëdo, Hiroshi Irie, Kyoichi Suzuki +2

We report transport measurements in a single edge channel of an InAs/GaSb quantum spin Hall insulator, where the conduction occurs through only one pair of counterpropagating edge…