101 citations · 158 across the 3 of their papers we have counts for
3 papers
Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
Wei Yi, Andrey A. Kiselev, Jacob Thorp +13
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of…
Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
Fanming Qu, Arjan J. A. Beukman, Stevan Nadj-Perge +9
Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases…
High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate
Binh-Minh Nguyen, Wei Yi, Ramsey Noah +2
We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in exce…