Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots

Abstract

We present a novel technique for the manipulation of the energy spectrum of hard-wall InAs/InP nanowire quantum dots. By using two local gate electrodes, we induce a strong electric dipole moment on the dot and demonstrate the controlled modification of its electronic orbitals. Our approach allows us to dramatically enhance the single-particle energy spacing between the first two quantum levels in the dot and thus to increment the working temperature of our InAs/InP single-electron transistors. Our devices display a very robust modulation of the conductance even at liquid nitrogen temperature, while allowing an ultimate control of the electron filling down to the last free carrier. Potential further applications of the technique to time-resolved spin manipulation are also discussed.

6 pages, 5 figures

References in corpus (4)

• Tunable Supercurrent Through Semiconductor Nanowires
• Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot
• Tunable effective g-factor in InAs nanowire quantum dots
• InAs nanowire hot-electron Josephson transistor

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• Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots
• Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics
• InAs nanowire superconducting tunnel junctions: spectroscopy, thermometry and nanorefrigeration
• Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots
• Single and Few-Particle States in Core-Shell Nanowire Quantum Dots
• Probing proximity induced superconductivity in InAs nanowire using built-in barriers
• Enhanced Thermoelectricity in Nanowires with inhomogeneous Helical states