Giant thermovoltage in single InAs-nanowire field-effect transistors

Abstract

Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity between room temperature and 100K$. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.

6 pages, 4 figures

References in corpus (5)

• One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires
• Thermal and Thermoelectric Transport in Nanostructures and Low-Dimensional Systems
• InAs nanowire hot-electron Josephson transistor
• Hybrid InAs nanowire-vanadium proximity SQUID
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