21 citations · 27 across the 2 of their papers we have counts for
4 papers
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
J. G. Gluschke, J. Seidl, A. M. Burke +7
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trenc…
p-GaAs nanowire MESFETs with near-thermal limit gating
A. R. Ullah, F. Meyer, J. G. Gluschke +5
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconduc…
The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors
A. R. Ullah, H. J. Joyce, H. H. Tan +2
We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N and O, and N bubbled through liquid…
The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs
A. R. Ullah, A. P. Micolich, J. W. Cochrane +1
There has recently been significant interest in rubrene single-crystals grown using physical vapour transport techniques due to their application in high-mobility organic field-eff…