31 citations · 127 across the 8 of their papers we have counts for
8 papers
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
J. G. Gluschke, J. Seidl, A. M. Burke +7
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trenc…
p-GaAs nanowire MESFETs with near-thermal limit gating
A. R. Ullah, F. Meyer, J. G. Gluschke +5
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconduc…
Near-thermal limit gating in heavily-doped III-V semiconductor nanowires using polymer electrolytes
A. R. Ullah, D. J. Carrad, P. Krogstrup +2
Doping is a common route to reducing nanowire transistor on-resistance but has limits. High doping level gives significant loss in gate performance and ultimately complete gate fai…
The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors
A. R. Ullah, H. J. Joyce, H. H. Tan +2
We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N and O, and N bubbled through liquid…
Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry
D. J. Carrad, A. B. Mostert, A. R. Ullah +8
A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the tw…
Towards low-dimensional hole systems in Be-doped GaAs nanowires
A. R. Ullah, J. G. Gluschke, P. Krogstrup +3
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs n…