31 citations · 127 across the 8 of their papers we have counts for
4 papers · 1 filter
p-GaAs nanowire MESFETs with near-thermal limit gating
A. R. Ullah, F. Meyer, J. G. Gluschke +5
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconduc…
Near-thermal limit gating in heavily-doped III-V semiconductor nanowires using polymer electrolytes
A. R. Ullah, D. J. Carrad, P. Krogstrup +2
Doping is a common route to reducing nanowire transistor on-resistance but has limits. High doping level gives significant loss in gate performance and ultimately complete gate fai…
Towards low-dimensional hole systems in Be-doped GaAs nanowires
A. R. Ullah, J. G. Gluschke, P. Krogstrup +3
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs n…
Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
A. R. Ullah, H. J. Joyce, A. M. Burke +3
We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter.…