21 citations · 27 across the 2 of their papers we have counts for
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physics.app-ph2018
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
J. G. Gluschke, J. Seidl, A. M. Burke +7
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trenc…
physics.app-ph2017★ 21 cited
The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors
A. R. Ullah, H. J. Joyce, H. H. Tan +2
We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N and O, and N bubbled through liquid…