21 citations · 27 across the 2 of their papers we have counts for
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physics.app-ph2018
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
J. G. Gluschke, J. Seidl, A. M. Burke +7
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trenc…
cond-mat.mes-hall2018
p-GaAs nanowire MESFETs with near-thermal limit gating
A. R. Ullah, F. Meyer, J. G. Gluschke +5
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconduc…