activity
20092015
most citedLinear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2

378 citations · 971 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.supr-con2015★ 131 cited

Dichotomy between the hole and electrons behavior in the multiband FeSe probed by ultra high magnetic fields

M. D. Watson, T. Yamashita, S. Kasahara +15

Magnetoresistivity \r{ho}xx and Hall resistivity \r{ho}xy in ultra high magnetic fields up to 88T are measured down to 0.15K to clarify the multiband electronic structure in high-q…

cond-mat.supr-con2015★ 376 cited

Emergence of the nematic electronic state in FeSe

M. D. Watson, T. K. Kim, A. A. Haghighirad +11

We present a comprehensive study of the evolution of the nematic electronic structure of FeSe using high resolution angle-resolved photoemission spectroscopy (ARPES), quantum oscil…

cond-mat.supr-con2014★ 6 cited

Fermi surface of IrTe2 in the valence-bond state as determined by quantum oscillations

S. F. Blake, M. D. Watson, A. McCollam +11

We report the observation of the de Haas-van Alphen effect in IrTe2 measured using torque magnetometry at low temperatures down to 0.4 K and in high magnetic fields up to 33T. IrTe…

cond-mat.str-el2014★ 378 cited

Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2

A. Narayanan, M. D. Watson, S. F. Blake +10

Cd3As2 is a candidate three-dimensional Dirac semi-metal which has exceedingly high mobility and non-saturating linear magnetoresistance that may be relevant for future practical a…

cond-mat.mes-hall2009★ 80 cited

Magnetotransport properties of individual InAs nanowires

Sajal Dhara, Hari S. Solanki, Vibhor Singh +5

We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is w…